Study on defect properties of nanocrystalline TiO₂ during phase transition by positron annihilation lifetimeZHENG, F; LIU, Y; LIU, Z et al.Journal of crystal growth. 2012, Vol 353, Num 1, pp 55-58, issn 0022-0248, 4 p.Article

Optimizing dopant activation in Si:P double δ-layersMCKIBBIN, Sarah R; CLARKE, Warrick R; FUHRER, Andreas et al.Journal of crystal growth. 2010, Vol 312, Num 21, pp 3247-3250, issn 0022-0248, 4 p.Article

The characteristics of heterogeneous nucleation on concave surfaces and implications for directed nucleation or surface activity by surface nanopatterningQIAN, M; MA, J.Journal of crystal growth. 2012, Vol 355, Num 1, pp 73-77, issn 0022-0248, 5 p.Article

Effect of a magnetic field on the surface topography of L-alanine crystalsGUZMAN, L. A; OGAWA, K; SUZUKI, E et al.Journal of crystal growth. 2003, Vol 249, Num 1-2, pp 335-340, issn 0022-0248, 6 p.Article

Analyzing capture zone distributions (CZD) in growth: Theory and applicationsEINSTEIN, Theodore L; PIMPINELLI, Alberto; GONZALEZA, Diego Luis et al.Journal of crystal growth. 2014, Vol 401, pp 67-71, issn 0022-0248, 5 p.Conference Paper

Early stages of nanosecond pulsed-laser growth of silicon pillars in vacuumBELAROUSSI, Y; KERDJA, T; YADDADENE, C et al.Journal of crystal growth. 2011, Vol 337, Num 1, pp 20-23, issn 0022-0248, 4 p.Article

A detailed kinetic Monte Carlo study of growth from solution using MD-derived rate constantsREILLY, Anthony M; BRIESEN, Heiko.Journal of crystal growth. 2012, Vol 354, Num 1, pp 34-43, issn 0022-0248, 10 p.Article

Understanding the cubic AIN growth plane from first principlesRAULS, E; WIEBE, J; SCHMIDT, W. G et al.Journal of crystal growth. 2010, Vol 312, Num 20, pp 2892-2895, issn 0022-0248, 4 p.Article

4H-SiC surface structure transitions during crystal growth following bunching in a fast sublimation processKRZYZEWSKI, Filip.Journal of crystal growth. 2014, Vol 401, pp 511-513, issn 0022-0248, 3 p.Conference Paper

Stable structure and effects of oxygen on InN (1 0 1 0) and (1 1 2 0) surfacesJIANLI WANG; DONGMEI BAI; GANG TANG et al.Journal of crystal growth. 2011, Vol 327, Num 1, pp 233-236, issn 0022-0248, 4 p.Article

The effect of kinetics in the surface evolution of thin crystalline filmsSTÖCKER, C; VOIGT, A.Journal of crystal growth. 2007, Vol 303, Num 1, pp 90-94, issn 0022-0248, 5 p.Conference Paper

Effects of L-Aspartic acid on the step retreat kinetics of calciteYOSHINO, Toru; KAGI, Hiroyuki.Journal of crystal growth. 2012, Vol 338, Num 1, pp 244-250, issn 0022-0248, 7 p.Article

Microstructure evolution of Bi_0.4Ca_0.6MnO₃ epitaxial films with different thicknessDING, Y. H; CAI, R. S; DU, Q. T et al.Journal of crystal growth. 2011, Vol 317, Num 1, pp 115-118, issn 0022-0248, 4 p.Article

Zipping process on the step bunching in the vicinal surface of the restricted solid-on-solid model with the step attraction of the point contact typeAKUTSU, Noriko.Journal of crystal growth. 2011, Vol 318, Num 1, pp 10-13, issn 0022-0248, 4 p.Conference Paper

Specific surface free energy and etch pit density of synthesized quartz crystalSUZUKI, Takaomi; SUGIHARA, Naoki; TESHIMA, Katsuya et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 719-721, issn 0022-0248, 3 p.Conference Paper

Synthesis and characterization of Mo₃Si single crystalROSALES, I.Journal of crystal growth. 2008, Vol 310, Num 16, pp 3833-3836, issn 0022-0248, 4 p.Article

Step flow and polytype transformation in growth of 4H-SiC crystalsCHUNJUN LIU; XIAOLONG CHEN; TONGHUA PENG et al.Journal of crystal growth. 2014, Vol 394, pp 126-131, issn 0022-0248, 6 p.Article

Multifractal analysis of areas of spatial forms on surface of Zn_xCd_1-xTe-Si (111) heterocompositionsMOSKVIN, Pavel; KRYZHANIVSKYY, Vyacheslav; RASHKOVETSKYI, Liubomyr et al.Journal of crystal growth. 2014, Vol 404, pp 204-209, issn 0022-0248, 6 p.Article

Dynamic and topographic observation of calcite dissolution using enhanced in-situ phase-shift interferometryUETA, Shinzo; SATOH, Hisao; NISHIMURA, Yoshihiro et al.Journal of crystal growth. 2013, Vol 363, pp 294-299, issn 0022-0248, 6 p.Article

Inhibition of Te surfactant effect on surface morphology of heavily Te-doped GaAsPAQUETTE, Bernard; ILAHI, Bouraoui; AIMEZ, Vincent et al.Journal of crystal growth. 2013, Vol 383, pp 30-35, issn 0022-0248, 6 p.Article

The crystallization kinetics of potassium chloride in the presence of additives with common ionsAYHAN ABDULLAH CEYHAN; BULUTCU, A. Nusret.Journal of crystal growth. 2013, Vol 383, pp 112-118, issn 0022-0248, 7 p.Article

Incorporation of Mn atoms into the GaAs(110) surfaceHIRAYAMA, Motoi; TSUKAMOTO, Shiro.Journal of crystal growth. 2013, Vol 378, pp 50-52, issn 0022-0248, 3 p.Conference Paper

Characterization of nanostructured spinel zinc aluminate crystals on wurtzite zinc oxide templateLIANG, Yuan-Chang; HU, Chia-Yen; DENG, Xian-Shi et al.Journal of crystal growth. 2012, Vol 359, pp 25-29, issn 0022-0248, 5 p.Article

Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dotsTOMMILA, J; TUKIAINEN, A; VIHERIÄLÄ, J et al.Journal of crystal growth. 2011, Vol 323, Num 1, pp 183-186, issn 0022-0248, 4 p.Conference Paper

Stability of hydrogen on nonpolar and semipolar nitride surfaces: Role of surface orientationAKIYAMA, Toru; YAMASHITA, Tomoki; NAKAMURA, Kohji et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 79-83, issn 0022-0248, 5 p.Conference Paper